? 2005 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gsm 30 v i d25 t c = 25 c22a i dm t c = 25 c, pulse width limited by t jm 66 a i ar t c = 25 c22a e ar t c = 25 c30mj e as t c = 25 c 750 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 ? p d t c = 25 c 350 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c maximum tab temperature for soldering 260 c for 10s m d mounting torque 1.13/10 nm/lb.in. weight to-247 6 g plus220 & plus220smd 4 g g = gate d = drain s = source tab = drain ds99358a(03/05) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 4 ma 3.0 5.0 v i gss v gs = 20 v dc , v ds = 0 10 na i dss v ds = v dss 5 a v gs = 0 v t j = 125 c50 a r ds(on) v gs = 10 v, i d = 0.5 i d25 270 m ? pulse test, t 300 s, duty cycle d 2 % polarhv tm hiperfet power mosfet advance technical information n-channel enhancement mode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density ixfh 22n50p ixfv 22n50p ixfv 22n50ps v dss = 500 v i d25 = 22 a r ds(on) = 270 m ? ? ? ? ? to-247 ad (ixfh) (tab) g s d plus220 (ixfv) g s plus220smd (ixfv-ps) d (tab) d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 ixfh 22n50p ixfv 22n50p ixfv 22n50ps symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 20 s c iss 3050 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 340 pf c rss 40 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 27 ns t d(off) r g = 18 ? (external) 75 ns t f 21 ns q g(on) 70 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 17 nc q gd 40 nc r thjc 0.35 k/w r thck (to-247 & plus220) 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 22 a i sm repetitive 66 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 22a, -di/dt = 100 a/ s 200 ns q rm v r = 100v 1.0 c to-247 ad (ixfh) outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc d1 l l3 l1 e1 e e b d c a2 a1 a l2 terminals: 1-gate 2-drain e1 e l2 d l3 l l 1 3x b 2x e c a 2 a1 a e1 d1 plus220 (ixfv) outline l l3 l2 l1 a1 e1 e d1 e b d c a2 a a3 l4 terminals: 1-gate 2-drain e e1 d l2 a a1 l 1 l l3 e 2x b c a 2 l 4 a 3 e1 plus220smd (ixfv-ps) outline
? 2005 ixys all rights reserved ixfh 22n50p ixfv 22n50p ixfv 22n50ps fig. 2. extended output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 45 50 55 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 8v 5v 7v 6v fig. 3. output characteristics @ 125 o c 0 2 4 6 8 10 12 14 16 18 20 22 0246810121416 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 1. output characteristics @ 25 o c 0 2 4 6 8 10 12 14 16 18 20 22 01234567 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 22a i d = 11a v gs = 10v fig. 6. drain current vs. case temperature 0 4 8 12 16 20 24 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 0 5 10 15 20 25 30 35 40 45 50 55 i d - amperes r d s ( o n ) - normalized t j = 125 c t j = 25 c v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 ixfh 22n50p ixfv 22n50p ixfv 22n50ps fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 q g - nanocoulombs v g s - volts v ds = 250v i d = 11a i g = 10ma fig. 7. input adm ittance 0 5 10 15 20 25 30 35 3.5 4 4.5 5 5.5 6 6.5 7 v g s - volts i d - amperes t j = 125 c 25 c -40 c fig. 8. transconductance 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 i d - amperes g f s - siemens t j = -40 c 25 c 125 c fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125 c t j = 25 c fig. 12. forw ard-bias safe operating area 1 10 100 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150 c t c = 25 c r ds(on) limit 10ms 25s
? 2005 ixys all rights reserved fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - c / w ixfh 22n50p ixfv 22n50p ixfv 22n50ps
|
